bwin必赢国际

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

New N40V SGT MOSFETs for Sweeper

IGBT Fast Series

SOD-123HE Diode

High junction temperature ultrafast recovery diode

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

SOD-323FL Schottky

P60V MOSFET for Automotive Electronics

JC

New N100V MOSFET for PD Power Supply
网站地图