bwin必赢国际

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
 PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density ，having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform；
2. 650V breakdown voltage,Ic=160A@Tc=100℃；
3. Low conduction loss,low switching loss；
4. Copacked with Very?soft,fast?recovery?antiparallel?diode；
SPECIFICATION

DGQ160N65CTS2A

Related new products

N100V MOSFET for Automotive Electronic Applications

Optimization Design of Rectifier Bridge —— New Package GBU-L

Low Power SCR&TRIAC for Leakage Protection

IGBT 50A/75A 1200V Discrete for Industrial Control

Small Signal Schottky and Switching Diode in DFN0603 Package

SOD-323FL Schottky

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

SGT N80-85V Power MOSFET

TOLL N100V MOSFETs for Industrial

80A/1200V IGBT Discrete for Automotive PTC
网站地图